HAF2001
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Switching Time t (µs)
500
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
1000
500
Switching Characteristics
V
GS
= 5 V, V
DD
= 30 V
PW = 300 µs, duty < 1 %
200
100
50
200
t d(off)
100
50
20
10
0.5
tf
tr
t d(on)
1
2
5
10 20
Drain Current I
D
(A)
50
20
10
0.5
1
2
5
10 20
50
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Souece to Drain Voltage
50
Reverse Drain Current I
DR
(A)
Pulse Test
40
Capacitance C (pF)
10000
Typical Capacitance vs.
Drain to Source Voltage
1000
Coss
30
V
GS
= 5 V
0V
20
100
V
GS
= 0
f = 1 MHz
10
10
0
0.4
0.8
1.2
1.6
2.0
0
10
20
30
40
50
Source to Drain Voltage
V
SD
(V)
Drain to Source Voltage V
DS
(V)
6
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