ADE–208–253 (Z)
THERMAL FET HAF2001
Silicon N Channel MOS FET Series
1st. Edition
Jun 1995
Application
Power switching
Over temperature shut–down capability
TO–220AB
Features
This FET has the over temperature shut–down
capability sensing to the junction temperature.
This FET has the built–in over temperature shut–
down circuit in the gate area. And this ciruit
operation to shut–down the gate voltage in case of
high junction temperature like applying over
power consumption, over curretn etc.
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short
circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation
(Need 0 voltage recovery)
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
60
16
–2.8
20
40
20
50
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
1. Gate
2. Drain
3. Source
D
1
2
G
3
Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
S
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Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS-
V
GSS+
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* PW
10µs, duty cycle < 1 %
** Value at Tc = 25°C
1
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