6AM14
Silicon N Channel / P Channel Power MOS FET Array
1st. Edition
Jun. 1995
Application
Hgh speed power switching
SP-12TA
Features
Low on–resistance
Low drive current
High speed switching
High density mounting
Pch
4
6
1
1
: Nch Source
2, 8, 9 : Nch Gate
3, 7,10 : Nch Drain
: Pch Drain
4, 6,11 : Pch Gate
5, 12 : Pch Source
12
5
12
11
3
Nch
2
8
7
10
9
1
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Ratings
————————
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Nch
60
±20
7
28
7
42
4.8
150
–55 to +150
Pch
–60
±20
–7
–28
–7
Unit
V
V
A
A
A
W
W
°C
°C
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Pch**
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
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*
PW
10 µs, duty cycle
1 %
**
Value at 6 Drive operation
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