4AM16
Silicon N Channel/P Channel Power MOS FET Array
Application
High speed power switching
SP–12
Features
• Low on–resistance
N Channel : R
DS(on)
0.17Ω,
V
GS
= 10V , I
D
= 4A
P Channel : R
DS(on)
0.2Ω,
V
GS
= -10V , I
D
= -4A
• High speed switching
• High density mounting
• Suitable for H–brided motor driver
1
12
1, 5, 8, 12 ; Gate
2, 4, 9, 11 ; Drain
3, 6, 7, 10 ; Source
Pch
9
8
12
11
Nch
2
1
5
4
3
6
7
10
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Ratings
———————
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Symbol
V
DSS
Nch
60
±20
8
32
8
28
Pch
-60
±20
-8
-32
-8
Unit
V
V
A
A
A
W
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch**
(Tc = 25 °C)
Pch**
Channel temperature
Storage temperature
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
————————————————————————
4.0
150
–55 to +150
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
*
PW
10 µs, duty cycle
1 %
**
4 Device Operation
1
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