4AM14
Silicon N Channel/P Channel Complementary Power MOS FET Array
Application
High speed power switching
SP-12TA
Features
• Low on-resistance
N-channel: R
DS
(on)
0.17
Ω,
V
GS
= 10 V
I
D
= 4 A
P-channel: R
DS
(on)
0.2
Ω,
V
GS
= –10 V
I
D
= –4 A
• Capable of 4 V gate drive
• Low drive current
• Hight speed switching
• High density mounting
• Suitable for H-bridged motor driver
• Discrete packaged devices of same die
N-channel: 2SK970 (TO-220AB),
2SK1093 (TO-220FM)
P-channel: 2SJ172 (TO-220AB),
2SJ175 (TO-220FM)
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Ratings
–––––––––––––––––––––
Nch
Pch
Unit
60
±20
8
32
8
32
4
150
–55 to +150
–60
±20
–8
–32
–8
V
V
A
A
A
W
W
°C
°C
1
Nch
2
4
12
5
1
Pch
8
3
9
6
11
1, 5, 8, 12 ; Gate
2, 4, 9, 11 ; Drain
3, 6, 7, 10 ; Source
12
7
10
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
*
**
PW
10 µs, duty cycle
1 %
4 devices operation
Symbol
V
DSS
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Pch (Tc =25°C)**
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
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1
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