4AK26
Silicon N Channel Power MOS FET Array
Application
SP–12
High speed power switching
Features
• Low on–resistance
R
DS(on)
0.06Ω, V
GS
= 10V, I
D
= 5A
R
DS(on)
0.075Ω, V
GS
= 4V, I
D
= 5A
• Capable of 4V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver and solenoid driver
and lamp driver
1
1,5,8,12 ; Gate
2,4,9,11 ; Drain
3,6,7,10 ; Source
12
9
8
12
2
1
5
4
11
3
6
7
10
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
60
±20
10
32
10
28
4
150
–55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
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Pch(Tc = 25 °C)**
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
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*
PW
10 µs, duty cycle
1 %
**
4 Devices operation
1
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