4AK25
Silicon N Channel Power MOS FET Array
Application
High speed power switching
SP–10
Features
• Low on–resistance
R
DS(on)
0.45Ω, V
GS
= 10V, I
D
= 1A
• Low drive current
• High speed switching
• High density mounting
2
1
1
10
3
4
5
6
7
8
10
1, 10 ; Source
2, 4, 6, 8 ; Gate
3, 5, 7, 9 ; Drain
9
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
60
±20
1.5
4.5
1.5
2.4
3.6
150
–55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
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Pch(Tc = 25 °C)**
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
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*
PW
10 µs, duty cycle
1 %
**
4 Devices operation
1
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