4AK23
Silicon N Channel Power MOS FET Array
Application
High speed power switching
SP–12TA
Features
• Low on–resistance
R
DS(on)
0.25Ω, V
GS
= 10V, I
D
= 2.5A
• Low drive current
• High speed switching
• High density mounting
• Suitable for H–bridged motor driver
1
1, 5, 8, 12 ; Gate
2, 4, 9, 11 ; Drain
3, 6, 7, 10 ; Source
4
12
2
1
5
9
12
11
8
3
6
7
10
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
100
±20
5
20
5
32
4
150
–55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
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Pch(Tc = 25 °C)**
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
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*
PW
10 µs, duty cycle
1 %
**
4 Devices operation
1
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