4AJ11
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
Min
–60
Typ
—
Max
—
Unit
V
Test conditions
I
D
= –10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
———————————————————————————————————————————
———————————————————————————————————————————
±20
—
—
V
———————————————————————————————————————————
—
—
–1.0
—
—
—
—
0.09
±10
–250
–2.0
0.13
µA
µA
V
Ω
Ω
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
R
DS(on)
V
GS(off)
I
D
= –1 mA, VDS = –10 V
I
D
= –4 A
V
GS
= –10 V *
I
D
= –4 A
V
GS
= –4 V *
V
DS
= –50 V, V
GS
= 0
————————————————————————
—
0.12
0.17
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
Ciss
Coss
Crss
t
d(on)
5.5
7.7
—
S
———————————————————————————————————————————
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on delay time
Rise time
Turn–off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
* Pulse Test
s
See characteristic curves of 2SJ173, 2SJ176.
—
—
—
—
—
—
—
—
1400
720
220
15
120
220
160
–1.05
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
I
F
= –8 A, V
GS
= 0
IF = –8 A, V
GS
= 0,
dIF / dt = 50 A / µs
I
D
= –4 A
V
DS
= –10 V *
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
I
D
= –8 A
V
GS
= –10 V
R
L
= 3.75
Ω
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
————————————————————————————————
————————————————————————————————
t
f
V
DF
t
rr
t
d(off)
t
r
———————————————————————————————————————————
———————————————————————————————————————————
—
190
—
µs
———————————————————————————————————————————
2