HAT3001F(P channele)
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Capacitance C (pF)
500
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
0
Ciss
Coss
Crss
200
100
50
20
10
–0.1 –0.2
–0.5 –1 –2
–5 –10
Reverse Drain Current I
DR
(A)
di / dt = 20 A / µs
V
GS
= 0, Ta = 25 °C
V
GS
= 0
f = 1 MHz
–10
–20
–30
–40
–50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –5 V
–10 V
–25 V
V
GS
V
DS
V
DD
= –25 V
–10 V
–5 V
V
GS
(V)
0
0
500
Switching Characteristics
Switching Time t (ns)
–10
–2
200
100
t d(off)
Drain to Source Voltage
Gate to Source Voltage
–20
–4
tf
50
tr
20
10
5
–0.1 –0.2
t d(on)
V
GS
= –4 V, V
DD
= –10 V
PW = 3 µs, duty < 1 %
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
–30
–6
–40
–50 I
D
= –2.5 A
0
4
8
12
16
Gate Charge Qg (nc)
–8
–10
20
10
Home Index Bookmark Pages Text
Previous Next
Pages: Home Index