HAT3001F(P channele)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
)
–0.5
Static Drain to Source on State Resistance
vs. Drain Current
1
0.5
0.2
0.1
V
GS
= –2.5 V
–4 V
–0.4
–0.3
I
D
= –2 A
–0.2
–1 A
–0.5 A
0
–6
–2
–4
Gate to Source Voltage
–10
V
GS
(V)
–8
0.05
–0.1
0.02
Pulse Test
0.01
–5
–0.1 –0.2 –0.5 –1
–2
Drain Current I
D
(A)
–10
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
I
D
= –2 A –1 A
–0.5 A
V
GS
= –2.5 V
Forward Transfer Admittance vs.
Drain Current
20
10
5
Tc = –25 °C
0.3
2
75 °C
1
0.5
0.2
–0.1 –0.2
25 °C
0.2
0.1
0
–40
–2 A, –1 A, –0.5 A
–4 V
V
DS
= –10 V
Pulse Test
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
0
40
80
120
160
Case Temperature Tc (°C)
9
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