HAT2010F
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(V)
Drain to Source On State Resistance
R
DS(on)
(
)
0.5
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.4
Drain to Source Voltage
0.3
0.2
0.1
V
GS
= 4 V
10 V
0.2
I
D
=2A
0.1
1A
0.5 A
2
4
6
Gate to Source Voltage
8
10
V
GS
(V)
0.05
0.02
0.01
0.2
0
0.5
1
2
Drain Current
10
I
D
(A)
5
20
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
I
C
= 1 A, 2 A
0.5 A
20
10
5
Forward Transfer Admittance vs.
Drain Current
Tc = –25 °C
0.12
V
GS
= 4 V
25 °C
2
1
0.5
V
DS
= 10 V
Pulse Test
0.5
1
2
5
10
20
Drain Current I
D
(A)
75 °C
0.08
0.5 A, 1 A, 2 A
10 V
0.04
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
0.2
0.2
4
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