HAT2009F
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
)
0.5
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.4
0.2
0.1
V
GS
= 2.5 V
4V
Drain to Source Voltage
0.3
0.2
I
D
=2A
0.1
1A
0.5 A
2
4
6
Gate to Source Voltage
8
V
GS
(V)
10
0.05
0.02
0.01
0.2
0
0.5
1
2
Drain Current
10
I
D
(A)
5
20
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
I
C
= 2A, 1 A
V
GS
= 2.5 V
2A
0.5 A 1 A
4V
0.5 A
50
Forward Transfer Admittance vs.
Drain Current
20
10
5
75 °C
2
1
0.5
0.2
V
DS
= 10 V
Pulse Test
0.5
1
2
5
10
20
Drain Current I
D
(A)
Tc = –25 °C
0.12
25 °C
0.08
0.04
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
4
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