HAT2008F
Body–Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
di/dt = 20 A/µs
V
GS
= 0, Ta = 25°C
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
200
100
50
20
10
5
0.2
0.5
1
2
5
10 20
Reverse Drain Current I
DR
(A)
Capacitance C (pF)
Dynamic Input Characteristics
V
DS
(V)
I
D
= 3.5 A
40
V
DD
= 5 V
10 V
20 V
V
DS
20
V
GS
8
V
GS
(V)
50
10
500
Switching Characteristics
Switching Time t (ns)
200
100
t d(off)
tf
Drain to Source Voltage
30
6
Gate to Source Voltage
50
t d(on)
tr
4
20
10
5
0.2
10
V
DD
= 20 V
10 V
5V
4
8
12
16
Gate Charge Qg (nc)
2
0
20
V
GS
= 4 V, V
DD
= 10 V
PW = 3 µs, duty < 1 %
0.5
1
2
Drain Current
10
I
D
(A)
5
20
0
5
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