ADE–208–367 (Z)
HAT2008F Target Specification
Silicon N Channel Power MOS FET
1st. Edition
May 1995
Application
Power switching
SOP–8
Features
Low on–resistance
Capable of 2.5V gate drive
Low drive current
High density mounting
7 8
D D
5 6
D D
8
7
65
3
1 2
4
2
G
4
G
Ordering Information
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Hitachi Cord
EIAJ Cord
JEDEC Cord
FP–8D
SC–527–8A
S1
S3
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
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Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
MOS1
MOS2
Ratings
20
±10
3.5
14
1.5
1
150
–55 to +150
Unit
V
V
A
A
W
W
°C
°C
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Pch***
Pch**
Tch
Tstg
I
D(pulse)
*
I
D
V
GSS
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*
PW
10 µs, duty cycle
1 %
**
1 Drive operation
When using the glass epoxy board (40
x
40
x
1.6 mm)
***
2 Drive operation
When using the glass epoxy board (40
x
40
x
1.6 mm)
1
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