HAT2007F
500
Reverse Recovery Time trr (ns)
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
100
50
20
10
5
0.2
di/dt = 20 A/µs
V
GS
= 0, Ta = 25°C
10 20
0.5
1
2
5
Reverse Drain Current I
DR
(A)
Capacitance C (pF)
200
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
I
D
= 4 A
40
V
DD
= 5 V
10 V
20 V
V
DS
20
V
GS
8
16
V
GS
(V)
50
20
1000
Switching Characteristics
V
GS
= 4 V, V
DD
= 10 V
500 PW = 3 µs, duty < 1 %
Switching Time t (ns)
Drain to Source Voltage
Gate to Source Voltage
200
100
50
30
12
tr
tf
t d(off)
10
V
DD
= 20 V
10 V
5V
8
16
24
32
Gate Charge Qg (nc)
4
0
40
20
10
0.2
t d(on)
0
0.5
1
2
Drain Current
10
I
D
(A)
5
20
5
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