HAT2007F
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
)
0.5
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.4
0.2
0.1
V
GS
= 4 V
10 V
Drain to Source Voltage
0.3
I
D
=5A
0.2
2A
1A
0
2
4
6
Gate to Source Voltage
8
V
GS
(V)
10
0.05
0.1
0.02
0.01
0.2
0.5
1
2
Drain Current
10
I
D
(A)
5
20
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
20
10
Forward Transfer Admittance vs.
Drain Current
25 °C
Tc = –25 °C
5
75 °C
0.12
V
GS
= 4 V
I
C
=5A
1 A, 2 A
2
1
0.5
0.08
0.04
10 V
0
–40
1 A, 2 A, 5 A
0
40
80
120
160
Case Temperature Tc (°C)
0.2
0.2
V
DS
= 10 V
Pulse Test
0.5
1
2
5
10
20
Drain Current I
D
(A)
4
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