HAT2006F
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
500
di/dt = 20 A/µs
V
GS
= 0, Ta = 25°C
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
200
100
50
20
10
0.2
Capacitance C (pF)
0.5
1
2
5
10 20
Reverse Drain Current I
DR
(A)
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
I
D
= 4 A
V
GS
(V)
100
20
1000
Switching Characteristics
V
GS
= 4 V, V
DD
= 10 V
500 PW = 3 µs, duty < 1 %
Switching Time t (ns)
tr
tf
t d(off)
t d(on)
80
16
Drain to Source Voltage
60
V
DS
V
DD
= 10 V
25 V
50 V
V
GS
V
DD
= 50 V
25 V
10 V
8
16
24
32
Gate Charge Qg (nc)
12
Gate to Source Voltage
200
100
50
40
8
20
4
0
40
20
10
0.2
0
0.5
1
2
Drain Current
10
I
D
(A)
5
20
5
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