HAT2005F
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
Min
20
Typ
Max
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±200 µA, V
DS
= 0
V
GS
= ±6.5 V, V
DS
= 0
V
DS
= 20 V, V
GS
= 0
———————————————————————————————————————————
———————————————————————————————————————————
±10
V
———————————————————————————————————————————
0.5
0.05
±10
10
1.5
0.065
µA
µA
V
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
R
DS(on)
V
GS(off)
VDS = 10 V, I
D
= 1 mA
I
D
= 2A
V
GS
= 4V *
————————————————————————
0.06
0.09
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
Ciss
Coss
Crss
t
on
7
10
S
I
D
= 2A
V
GS
= 2.5 V *
I
D
= 2 A
V
DS
= 10 V *
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
———————————————————————————————————————————
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on time
Turn–off time
Body–drain diode forward
voltage
* Pulse Test
810
600
155
100
270
0.9
pF
pF
pF
ns
ns
V
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
t
off
V
DF
V
GS
= 4 V, I
D
= 2 A
V
DD
= 10 V
———————————————————————————————————————————
I
F
= 3.5 A, V
GS
= 0
———————————————————————————————————————————
2
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