HAT2005F
Silicon N Channel Power MOS FET
2nd. Edition
Jun. 1995
Application
SOP–8
Power switching
8
5
7 6
Features
•
•
•
•
Low on–resistance
Capable of 2.5V gate drive
Low drive current
High density mounting
5 6 7 8
D D D D
3
1 2
4
4
G
Ordering Information
————————————————————
Hitachi Cord
EIAJ Cord
JEDEC Cord
FP–8D
SC–527–8A
—
S S
2 3
1
2, 3
4
5, 6, 7, 8
N/C
Source
Gate
Drain
————————————————————
————————————————————
————————————————————
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
20
±10
3.5
14
3.5
1
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
*
PW
≤
10 µs, duty cycle
≤
1 %
**
When using the glass epoxy board (40
x
40
x
1.6 mm)
1