HAT2004F
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
500
10000
3000
1000
300
100
30
10
0
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
200
100
50
Capacitance C (pF)
Ciss
Coss
Crss
20
10
0.2
di/dt = 20 A/µs
V
GS
= 0, Ta = 25°C
0.5
1
2
5
10 20
Reverse Drain Current I
DR
(A)
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
25
V
DD
= 5 V
10 V
15 V
V
DS
V
GS
10
4
10
500
Switching Characteristics
tr
Switching Time t (ns)
20
8
200
100
50
t d(on)
20
10
5
0.2
V
GS
= 4 V, V
DD
= 10 V
PW = 3 µs, duty < 1 %
0.5
1
2
Drain Current
10
I
D
(A)
5
20
tf
t d(off)
Drain to Source Voltage
15
6
5
V
DD
= 15 V
10 V
5V
8
16
24
32
Gate Charge Qg (nc)
2
0
40
0
Gate to Source Voltage
5
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