HAT2004F
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
Ω
)
0.5
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.4
0.2
0.1
V
GS
= 2.5 V
4V
Drain to Source Voltage
0.3
0.2
I
D
=2A
0.1
1A
0.5 A
8
V
GS
(V)
10
0.05
0.02
0.01
0.2
0
2
4
6
Gate to Source Voltage
0.5
2
1
Drain Current
5
I
D
(A)
10
20
Static Drain to Source on State Resistance
R
DS(on)
(
Ω
)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
I
D
= 0.5 A, 1 A, 2 A
V
GS
= 2.5 V
0.5 A, 1 A, 2 A
4V
50
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25 °C
0.12
25 °C
5
2
1
0.5
0.2
V
DS
= 10 V
Pulse Test
0.5
1
2
5
10
20
75 °C
0.08
0.04
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
Drain Current I
D
(A)
4