HAT2003F
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
500
di/dt = 20 A/µs
V
GS
= 0, Ta = 25°C
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
200
100
50
Capacitance C (pF)
Ciss
300
Coss
100
Crss
30
10
20
10
0.1
0.5
0.2
1
2
5
10
Reverse Drain Current I
DR
(A)
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= 5 V
10 V
25 V
V
DS
V
GS
(V)
50
10
500
Switching Characteristics
Switching Time t (ns)
40
8
200
100
50
20
10
5
0.1
tf
t d(off)
tr
Drain to Source Voltage
30
6
V
GS
I
D
= 2.5 A
V
DD
= 25 V
10 V
5V
8
16
24
32
Gate Charge Qg (nc)
4
20
Gate to Source Voltage
t d(on)
V
GS
= 4 V, V
DD
= 10 V
PW = 3 µs, duty < 1 %
0.2
0.5
1
Drain Current
2
5
I
D
(A)
10
10
2
0
40
0
5
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