HAT2003F
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
)
0.5
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.4
0.2
0.1
Drain to Source Voltage
0.3
I
D
=2A
1A
0.5 A
0
2
4
6
Gate to Source Voltage
8
V
GS
(V)
10
V
GS
= 2.5 V
4V
0.2
0.05
0.1
0.02
0.01
0.1
0.2
0.5
1
Drain Current
2
5
I
D
(A)
10
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.5 A
1A
0.20
2A
0.15
V
GS
= 2.5 V
50
Forward Transfer Admittance vs.
Drain Current
V
DS
= 10 V
Pulse Test
75 °C
25 °C
20
10
5
2
1
0.5
0.1
0.10
4V
0.05
0
–40
I
D
= 0.5 A, 1 A, 2 A
Tc = –25 °C
0
40
80
120
160
Case Temperature Tc (°C)
0.2
0.5
1
2
5
10
Drain Current I
D
(A)
4
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