HAT2002F
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(V)
Pulse Test
0.4
Drain to Source On State Resistance
R
DS(on)
(
Ω
)
0.5
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
V
GS
= 4 V
Drain to Source Voltage
0.3
0.2
I
D
=3A
0.1
2A
1A
2
4
6
Gate to Source Voltage
8
V
GS
(V)
10
0.05
0.02
0.01
0.1 0.2
0.5
1
2
10 V
0
5
10 20
50 100
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(
Ω
)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
I
D
= 1 A, 2 A, 3 A
50
Forward Transfer Admittance vs.
Drain Current
20
Tc = –25 °C
10
75 °C
5
2
1
0.5
0.1
V
DS
= 10 V
Pulse Test
0.3
1
3
10
30
100
25 °C
0.06
4V
0.04
1 A, 2 A, 3 A
V
GS
= 10 V
0.02
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
Drain Current I
D
(A)
4