HAT1008F
Body–Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
Crss
30
10
0
–10
–20
–30
V
GS
= 0
f = 1 MHz
–40
–50
Ciss
Coss
200
100
50
20
10
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
5
–0.1 –0.2
–0.5 –1.0 –2
–5 –10
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –5 V
–10 V
–25 V
V
GS
(V)
0
0
1000
Switching Characteristics
V
GS
= –4 V, V
DD
= –10 V
500 PW = 3 µs, duty < 1 %
200
100
50
tr
tf
t d(off)
t d(on)
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
Drain to Source Voltage
–20
V
DS
–30
V
DD
= –25 V
–10 V
–5 V
I
D
= –2.5 A
V
GS
–8
–12
–40
–50
0
–16
–20
40
Gate to Source Voltage
Switching Time t (ns)
–10
–4
20
10
–0.1 –0.2
8
16
24
32
Gate Charge Qg (nc)
5