HAT1006F
1000
Reverse Recovery Time trr (ns)
500
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
0
Ciss
Coss
Crss
200
100
50
20
10
–0.5 –1 –2
–5 –10
–0.1 –0.2
Reverse Drain Current I
DR
(A)
di / dt = 20 A / µs
V
GS
= 0, Ta = 25 °C
Capacitance C (pF)
V
GS
= 0
f = 1 MHz
–10
–20
–30
-40
–50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –10 V
–25 V
–50 V
V
GS
V
GS
(V)
0
0
500
Switching Characteristics
Switching Time t (ns)
–20
–4
200
100
50
tr
tf
t d(off)
Drain to Source Voltage
–40
V
DD
= –50 V
–25 V
V
DS
–10 V
–60
–8
Gate to Source Voltage
t d(on)
–12
I
D
= –2.5 A
20
10
5
–0.1 –0.2
V
GS
= –4 V, V
DD
= –10 V
PW = 3 µs, duty < 1 %
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
–80
–16
–20
40
–100
0
8
16
24
32
Gate Charge Qg (nc)
5
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