HAT1001F
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Capacitance C (pF)
500
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
200
100
50
2000
Ciss
1000
500
200
100
0
–10
–20
–30
Coss
20
10
–0.1 –0.3
–1
–3
–10 –30 –100
Reverse Drain Current I
DR
(A)
di / dt = 20 A / µs
V
GS
= 0, Ta = 25 °C
Crss
V
GS
= 0
f = 1 MHz
–40
–50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –5 V
–10 V
–15 V
V
DS
V
GS
–30
V
DD
= –15 V
–10 V
–5 V
V
GS
(V)
0
0
Switching Characteristics
1000
t d(off)
500
Switching Time t (ns)
tf
200
tr
100
50
20
10
–0.1 –0.3
V
GS
= –4 V, V
DD
= –10 V
PW = 5 µs, duty < 1 %
t d(on)
–10
–4
Drain to Source Voltage
–20
–8
–12
–40
I = –3.5 A
–50
D
0
80
20
40
60
Gate Charge Qg (nc)
–16
–20
100
Gate to Source Voltage
–1
–3
–10 –30
Drain Current I
D
(A)
–100
5
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