HAT1001F
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
)
–0.5
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
–0.4
0.2
0.1
V
GS
= –2.5 V
–4 V
–0.3
–0.2
–0.5 A
–0.1
I
D
= –2 A
–1 A
0
–2
–4
–6
Gate to Source Voltage
–10
V
GS
(V)
–8
0.05
0.02
0.01
–0.5
–1
–2
–5 –10 –20
Drain Current I
D
(A)
–50
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.2
Pulse Test
0.16
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
10
5
75 °C
2
1
0.5
–0.1 –0.2
V
DS
= –10 V
Pulse Test
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
25 °C
0.12
V
GS
= –2.5 V
I
D
=
–0.5, –1, –2 A
0.08
0.04
0
–40
–2 A
–4 V
–0.5 A, –1 A
0
40
80
120
160
Case Temperature Tc (°C)
4
Home Index Bookmark Pages Text
Previous Next
Pages: Home Index