2SK2591
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
Min
500
Typ
—
Max
—
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±25 V, V
DS
= 0
V
DS
=500 V, V
GS
= 0
———————————————————————————————————————————
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±30
—
—
V
———————————————————————————————————————————
—
—
2.0
—
—
—
—
0.45
±10
–250
–3.0
0.60
µA
µA
V
Ω
———————————————————————————————————————————
———————————————————————————————————————————
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R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
V
GS(off)
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A
V
GS
= 10 V *
I
D
= 4 A
V
DS
= 10 V *
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 4 A
V
GS
= 10 V
R
L
= 5Ω
———————————————————————————————————————————
5.0
7.5
—
S
———————————————————————————————————————————
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on delay time
Rise time
Turn–off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
—
—
—
—
—
—
—
—
1450
410
55
20
55
130
50
0.9
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
I
F
= 8 A, V
GS
= 0
IF = 8 A, V
GS
= 0,
diF / dt = 100 A / µs
————————————————————————————————
————————————————————————————————
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————————————————————————————————
————————————————————————————————
————————————————————————————————
t
f
V
DF
t
rr
t
d(off)
t
r
———————————————————————————————————————————
———————————————————————————————————————————
—
380
—
ns
———————————————————————————————————————————
* Pulse Test
See characteristics curves of 2SK1166
2