2SK2582
Silicon N Channel MOS FET
1st. Edition
Jun. 1995
Preliminary
Application
TO–220AB
High speed power switching
Features
Low on–resistance
High speed switching
Low drive current
No Secondary Breakdown
Suitable for Switching regulator, DC – DC
converter
D
2
1
G
1
3
S
2
3
1. Gate
2. Drain
3. Source
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
350
±30
13
52
13
75
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
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Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
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*
PW
10 µs, duty cycle
1 %
**
Value at Tc = 25 °C
1
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