2SK2569
Silicon N Channel MOS FET
1st. Edition
Jun. 1995
Application
Low frequency power switching
3
MPAK
Features
• Low on-resistance.
R
DS(on)
= 2.6
Ω
max.
(at V
GS
= 4 V, I
D
= 100mA)
• 2.5V gate drive device.
• Small package (MPAK).
D
3
1
2
2
G
1. Source
2. Gate
3. Drain
S
1
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
50
±20
0.2
0.4
150
150
–55 to +150
Unit
V
V
A
A
mW
°C
°C
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Pch**
Tch
Tstg
I
D(pulse)
*
I
D
V
GSS
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*
PW
≤
10 µs, duty cycle
≤
1 %
1