2SK2568
Silicon N Channel MOS FET
1st. Edition
Jul. 1995
Preliminary
Application
High speed power switching
TO–3P
Features
Low on–resistance
High speed switching
Low drive current
Suitable for switching regulator and DC–DC
converter
S
2
1
G
1
3
D
2
3
1. Gate
2. Source
(Flange)
3. Drain
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
500
±30
12
48
12
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
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Pch**
Tch
Tstg
I
DR**
I
D(pulse)
*
I
D**
V
GSS
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* PW
10 µs, duty cycle
1 %
** Value at Tc = 25°C
1
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