2SK2554
Body–Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
100000
Capacitance C (pF)
30000
10000
3000
1000
Ciss
Coss
20
10
5
0.1
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
0.3
1
3
10
30
100
Reverse Drain Current I
DR
(A)
Crss
300
100
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
100
I
D
= 75 A
V
DD
= 10 V
25 V
50 V
20
10000
3000
Switching Time t (ns)
Switching Characteristics
80
16
t d(off)
1000
tf
300
100
tr
t d(on)
Drain to Source Voltage
60
V
DS
12
V
GS
40
8
20
V
DD
= 50 V
25 V
10 V
80
160
240
320
Gate Charge Qg (nc)
4
0
400
Gate to Source Voltage
0
30 V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
10
0.1 0.3
1
3
10
30
Drain Current I
D
(A)
100
5
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