2SK2554
Silicon N Channel MOS FET
4th. Edition
Feb. 1995
Target Spec.
Application
High speed power switching
TO–3P
Features
• Low on–resistance
R
DS(on)
= 4.5 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from
5 V souece
S
2
1
G
1
3
D
2
3
1. Gate
2. Drain
(Flange)
3. Source
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
60
±20
75
300
75
50
214
150
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
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Pch**
Tch
Tstg
E
AR***
I
AP***
I
DR**
I
D(pulse)
*
I
D**
V
GSS
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* PW
≤
10 µs, duty cycle
≤
1 %
** Value at Tc = 25°C
*** Value at Tch = 25°C, Rg
≥
50
Ω
1