2SK2529
Body–Drain Diode Reverse
Recovery Time
5000
Reverse Recovery Time trr (ns)
2000
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
Capacitance C (pF)
1000
500
200
100
50
20
10
5
0.1
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
0.3
1
3
10
30
100
Reverse Drain Current I
DR
(A)
Ciss
2000
1000
500
Coss
Crss
200
100
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
I
D
= 50 A
V
GS
(V)
100
20
Switching Characteristics
5000
2000
Switching Time t (ns)
1000
500
200
100
50
20
10
5
0.1
0.3
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
1
3
Drain Current
10
30
I
D
(A)
100
t d(off)
tf
tr
t d(on)
80
V
DD
= 10 V
25 V
50 V
V
GS
16
Drain to Source Voltage
60
V
DS
12
40
8
20
V
DD
= 50 V
25 V
10 V
40
80
120
160
Gate Charge Qg (nc)
4
0
200
0
Gate to Source Voltage
5
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