2SK2529
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
)
1.0
Static Drain to Source on State Resistance
vs. Drain Current
0.5
0.2
0.1
0.05
0.02
0.01
Pulse Test
0.8
Drain to Source Voltage
0.6
I
D
= 50 A
V
GS
= 4 V
10 V
0.4
0.005
0.002
0.001
0.2
20 A
10 A
6
2
4
Gate to Source Voltage
8
V
GS
(V)
10
0.0005
0
1
3
10
30
100 300
Drain Current I
D
(A)
1000
Static Drain to Source on State Resistance
R
DS(on)
(
)
0.04
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
0.032
Forward Transfer Admittance vs.
Drain Current
500
200
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
100
75 °C
25 °C
Tc = –25 °C
V
DS
= 10 V
Pulse Test
0.024
I
D
= 50 A
10, 20 A
V
GS
= 4 V
10, 20, 50 A
10 V
0.016
0.008
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
Drain Current I
D
(A)
4
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