ADE–208–356 (Z)
2SK2529
Silicon N Channel MOS FET
6th. Edition
Jun. 1995
Application
High speed power switching
TO–220CFM
Features
• Low on–resistance
R
DS(on)
= 7 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from
5 V souece
2
1
1
2
3
3
1. Gate
2. Drain
3. Source
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
60
±20
50
200
50
45
174
35
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
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Pch**
Tch
Tstg
E
AR***
I
AP***
I
DR
I
D(pulse)
*
I
D
V
GSS
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* PW
10 µs, duty cycle
1 %
** Value at Tc = 25°C
*** Value at Tch = 25°C, Rg
50
1
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