2SK2393
Body–Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
200
100
50
20
10
5
0.1
di/dt = 100 A/µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Reverse Drain Current I
DR
(A)
3000
1000
Coss
300
100
30
10
0
Crss
V
GS
= 0
f = 1 MHz
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
I
D
=8A
800
V
GS
(V)
1000
20
2000
1000
Switching Time t (ns)
500
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
t d(off)
tf
tr
t d(on)
16
V
DS
V
DD
= 250 V
400 V
600 V
Drain to Source Voltage
600
V
GS
12
Gate to Source Voltage
200
100
50
400
8
200
V
DD
= 250 V
400 V
600 V
80
40
120
160
Gate Charge Qg (nc)
4
0
200
0
20
0.1
0.2
0.5
1
Drain Current
2
5
I
D
(A)
10
5
Home Index Bookmark Pages Text
Previous Next
Pages: Home Index