2SK2390
500
Reverse Recovery Time trr (ns)
Body–Drain Diode Reverse
Recovery Time
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
200
100
50
20
10
5
0.1
di/dt = 50 A/µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Reverse Drain Current I
DR
(A)
Capacitance C (pF)
200
100
50
Crss
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
20
10
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
GS
(V)
100
V
DS
(V)
20
500
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
t d(off)
Switching Time t (ns)
Drain to Source Voltage
Gate to Source Voltage
80 V
DD
= 10 V
25 V
50 V
60
V
DS
40
16
V
GS
200
100
12
tf
50
tr
20
10
5
0.2
t d(on)
I
D
= 15 A
8
20
V
DD
= 50 V
25 V
10 V
8
16
24
32
Gate Charge Qg (nc)
4
0
40
0
0.5
1
2
Drain Current
10
I
D
(A)
5
20
5
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