2SK2390
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
)
2.0
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
1.6
I
D
= 15 A
1.2
10 A
0.2
V
GS
= 4 V
0.1
0.05
0.02
0.01
1
2
5
10 20
50
Drain Current I
D
(A)
100
10 V
Drain to Source Voltage
0.8
0.4
5A
0
2
4
6
Gate to Source Voltage
8
V
GS
(V)
10
Static Drain to Source on State Resistance
R
DS(on)
(
)
Pulse Test
0.4
I
D
= 15 A
0.3
V
GS
= 4 V
0.2
5A
10 A
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.5
20
10
5
Forward Transfer Admittance vs.
Drain Current
Tc = –25 °C
75 °C
25 °C
2
1
0.5
0.2
0.2
V
DS
= 10 V
Pulse Test
0.5
1
2
5
10
20
Drain Current I
D
(A)
0.1
5 A, 10 A, 15 A
0
–40
10 V
0
40
80
120
160
Case Temperature Tc (°C)
4
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