2SK2373
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source On State Resistance
R
DS(on)
(
)
0.5
Drain to Source Saturation Voltage
V
DS(on)
(V)
Static Drain to Source on State Resistance
vs. Drain Current
10
5
Ta = 25 °C
Pulse Test
0.4
2
V
GS
= 4 V
1
0.5
0.2
0.1
0.01 0.02
10 V
0.3
0.2
0.2 A
0.1
0.1 A
I
D
= 0.05 A
0
4
8
12
Gate to Source Voltage
16
V
GS
(V)
20
0.05 0.1 0.2
0.5
Drain Current I
D
(A)
1
Forward Transfer Admittance |yfs| (S)
1
0.5
Forward Transfer Admittance vs.
Drain Current
100
Ta = –25 °C
30
10
3
1
0.3
0.1
0.05 0.1
0.2
0.5
1
0
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
Ciss
Coss
Crss
0.2
0.1
0.05
25 °C
75 °C
0.02
0.01
0.01 0.02
V
DS
= 10 V
Pulse Test
V
GS
= 0
f = 1 MHz
10
20
30
40
50
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
4
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