2SK2373
Silicon N Channel MOS FET
Application
MPAK
Low frequency power switching
3
1
2
Features
Low on–resistance
Small package
Low drive current
4 V gate drive device - - - can be driven from
5 V source.
• Suitable for low signal load switch
G
•
•
•
•
D
1. Source
2. Gate
3. Drain
S
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
*
**
PW
≤
100 µs, duty cycle
≤
10 %
Marking is “ZE–”.
Symbol
V
DSS
Ratings
30
±20
0.2
0.4
0.2
150
150
–55 to +150
Unit
V
V
A
A
A
mW
°C
°C
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Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
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1