2SK2346
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Capacitance C (pF)
500
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
0
10
20
30
Crss
Ciss
Coss
V
GS
= 0
f = 1 MHz
200
100
50
20
10
0.1
di/dt = 50 A/µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Reverse Drain Current I
DR
(A)
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
100
20
1000
500
Switching Time t (ns)
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
t d(off)
80
Drain to Source Voltage
60
V
DS
V
GS
12
Gate to Source Voltage
V
DD
= 10 V
25 V
50 V
16
200
100
50
tr
20
10
0.1
t d(on)
0.3
1
3
Drain Current
10
30
I
D
(A)
100
tf
40
I
D
= 20 A
V
DD
= 50 V
25 V
10 V
20
40
60
80
Gate Charge Qg (nc)
8
20
4
0
100
0
5
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