2SK2346
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
)
1.0
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.8
0.2
0.1
0.05
V
GS
= 4 V
10 V
0.02
0.01
0.1
Drain to Source Voltage
0.6
I
D
= 15 A
10 A
5A
0.4
0.2
0
12
4
8
Gate to Source Voltage
16
V
GS
(V)
20
0.3
1
3
Drain Current
10
30
I
D
(A)
100
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.2
Pulse Test
50
Forward Transfer Admittance vs.
Drain Current
0.16
20
10
5
2
1
0.5
0.1
V
DS
= 10 V
Pulse Test
0.3
1
3
10
30
100
Drain Current I
D
(A)
Tc = –25 °C
25 °C
75 °C
0.12
I
D
= 15 A
5 A, 10 A
V
GS
= 4 V
5 A, 10 A, 15 A
10 V
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
0.08
0.04
4
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