2SK2334 L , 2SK2334 S
1000
Reverse Recovery Time trr (ns)
500
200
100
50
20
10
0.1
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
Capacitance C (pF)
3000
1000
300
100
30
10
0
10
20
30
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
di/dt = 50 A/µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Reverse Drain Current I
DR
(A)
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
100
20
1000
500
Switching Time t (ns)
200
100
50
20
10
0.3
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
t d(off)
tf
80
V
GS
60
V
DS
V
DD
= 10 V
25 V
50 V
16
Drain to Source Voltage
12
40
I
D
= 20 A
20
V
DD
= 50 V
25 V
10 V
20
40
60
80
Gate Charge Qg (nc)
8
Gate to Source Voltage
tr
t d(on)
1
3
Drain Current
10
I
D
(A)
30
4
0
100
0
5