2SK2330
L
, 2SK2330
S
Silicon N Channel MOS FET
Application
HDPAK
High speed power switching
4
4
Features
Low on–resistance
High speed switching
No secondary breakdown
Suitable for Switching regulator, DC – DC
converter
1 2
3
2, 4
1
1
1.
2.
3.
4.
Gate
Drain
Source
Drain
2
3
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
500
±30
15
60
15
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
*
PW
10 µs, duty cycle
1 %
**
Value at Tc = 25 °C
1
Home Index Bookmark Pages Text
Previous Next
Pages: Home Index