2SK2329 L , 2SK2329 S
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
5000
V
GS
= 0
f = 1 MHz
2000
Ciss
1000
500
Coss
200
100
50
200
100
50
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Crss
20
10
0.2
di/dt = 20 A/µs
V
GS
= 0, Ta = 25°C
0.5
1
2
5
10 20
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
100
20
1000
Switching Characteristics
V
GS
= 4 V, V
DD
= 10 V
500 PW = 3 µs, duty < 1 %
Switching Time t (ns)
t d(off)
200
tf
100
50
tr
t d(on)
20
10
0.2
80
V
DD
= 10 V
25 V
60
V
GS
40
V
DS
20
V
DD
= 25 V
10 V
0
20
40
60
80
Gate Charge Qg (nc)
I
D
= 10 A
16
Drain to Source Voltage
12
8
4
0
100
Gate to Source Voltage
0.5
1
2
Drain Current
10
I
D
(A)
5
20
5
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