2SK2329
L
, 2SK2329
S
Silicon N Channel MOS FET
Application
DPAK-2
High speed power switching
4
4
Features
Low on–resistance
High speed switching
Low drive current
2.5 V gate drive device can be driven from
3 V source
• Suitable for Switching regulator, DC – DC
converter
12
3
2, 4
12
3
1.
2.
3.
4.
Gate
Drain
Source
Drain
1
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
30
±10
10
40
10
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
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Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
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*
PW
10 µs, duty cycle
1 %
**
Value at Tc = 25 °C
1
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