2SK2322 L , 2SK2322 S
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
10000
V
GS
= 0
f = 1 MHz
Ciss
1000
Coss
200
100
50
100
Crss
20
10
0.1
di/dt = 50 A/µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Reverse Drain Current I
DR
(A)
10
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
100
20
1000
500
Switching Time t (ns)
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
t d(off)
80
Drain to Source Voltage
60
V
GS
V
DS
12
Gate to Source Voltage
V
DD
= 10 V
25 V
50 V
16
200
100
50
tr
t d(on)
0.5
1
2
Drain Current
10
I
D
(A)
5
20
tf
40
I
D
= 15 A
20
V
DD
= 50 V
25 V
10 V
80
20
40
60
Gate Charge Qg (nc)
8
4
0
100
20
10
0.2
0
5
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